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onsemi NTMFS4C05NT1G-001 — Discrete Semiconductors

onsemi NTMFS4C05NT1G-001

MPNNTMFS4C05NT1G-001
End of Life
$1.4000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4C05NT1G-001 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11.9A (Ta), 78A (Tc)
Power dissipation770mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs3.4mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1972 pF @ 15 V