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onsemi NTMFS4C027NT1G — Discrete Semiconductors

onsemi NTMFS4C027NT1G

MPNNTMFS4C027NT1G
Active

MOSFET N-CH 30V 16.4A/52A 5DFN

$1.2400Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4C027NT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16.4A (Ta), 52A (Tc)
Power dissipation2.51W (Ta), 25.5W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs4.8mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs18.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1670 pF @ 15 V