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onsemi NTMFS4935NCT3G — Discrete Semiconductors

onsemi NTMFS4935NCT3G

MPNNTMFS4935NCT3G
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4935NCT3G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C13A (Ta), 93A (Tc)
Power dissipation930mW (Ta), 48W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs3.2mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs49.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4850 pF @ 15 V