onsemi NTMFS4897NFT1G
MPNNTMFS4897NFT1G
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Ta), 171A (Tc) |
| Power dissipation | 950mW (Ta), 96.2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN, 5 Leads |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 2mOhm @ 22A, 10V |
| Gate charge (Qg) (Max) @ vgs | 83.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5660 pF @ 15 V |