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onsemi NTMFS4851NT1G — Discrete Semiconductors

onsemi NTMFS4851NT1G

MPNNTMFS4851NT1G
Obsolete
$0.3600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4851NT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 11.5V
Current - continuous drain (Id) @ 25°C9.5A (Ta), 66A (Tc)
Power dissipation870mW (Ta), 41.7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5.9mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1850 pF @ 12 V