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onsemi NTMFS4833NT1G — Discrete Semiconductors

onsemi NTMFS4833NT1G

MPNNTMFS4833NT1G
Obsolete
$1.5200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS4833NT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16A (Ta), 156A (Tc)
Power dissipation910mW (Ta), 125W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs2mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs88 nC @ 11.5 V
Input capacitance (Ciss) (Max) @ vds5600 pF @ 12 V