onsemi NTMFS3D2N10MDT1G
MPNNTMFS3D2N10MDT1G
Active
PTNG 100V LOW Q3.2MOHM N-FET, HE
$1.7878Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 19A (Ta), 142A (Tc) |
| Power dissipation | 2.8W (Ta), 155W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN, 5 Leads |
| Vgs(th) (Max) @ id | 4V @ 316µA |
| Rds on (Max) @ id, vgs | 3.5mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 71.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3900 pF @ 50 V |