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onsemi NTMFS0D8N03CT1G — Discrete Semiconductors

onsemi NTMFS0D8N03CT1G

MPNNTMFS0D8N03CT1G
Active
$3.6600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS0D8N03CT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C54A (Ta), 337A (Tc)
Power dissipation3.8W (Ta), 150W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2.2V @ 200µA
Rds on (Max) @ id, vgs0.74mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds7690 pF @ 15 V