Skip to main content
onsemi NTMFS0D8N02P1ET1G — Discrete Semiconductors

onsemi NTMFS0D8N02P1ET1G

MPNNTMFS0D8N02P1ET1G
Active
$3.7200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS0D8N02P1ET1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C55A (Ta), 365A (Tc)
Power dissipation3.2W (Ta), 139W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+16V, -12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id2V @ 2mA
Rds on (Max) @ id, vgs0.68mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs52 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds8600 pF @ 13 V