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onsemi NTMFS006N12MCT1G — Discrete Semiconductors

onsemi NTMFS006N12MCT1G

MPNNTMFS006N12MCT1G
Active
$3.2000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS006N12MCT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C15A (Ta), 93A (Tc)
Power dissipation2.7W (Ta), 104W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id4V @ 260µA
Rds on (Max) @ id, vgs6mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs42 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3365 pF @ 60 V