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onsemi NTMFS002N10MCLT1G — Discrete Semiconductors

onsemi NTMFS002N10MCLT1G

MPNNTMFS002N10MCLT1G
Active

PTNG 100V LL SO8FL HE

$3.2100Ref. price · indicative, final on quote
Packaging8-PowerTDFN, 5 Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NTMFS002N10MCLT1G specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C22A (Ta), 175A (Tc)
Power dissipation3W (Ta), 189W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ id3V @ 351µA
Rds on (Max) @ id, vgs2.8mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs97 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7200 pF @ 50 V