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onsemi MMBT5551LT1H — Discrete Semiconductors

onsemi MMBT5551LT1H

MPNMMBT5551LT1H
Active
$0.0300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MMBT5551LT1H specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown160 V
Current - collector (Ic)600 mA
Current - collector cutoff100nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max225 mW
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic200mV @ 5mA, 50mA