MMBT5551LT1G

onsemi

TRANS NPN 160V 0.6A SOT23-3

onsemi MMBT5551LT1G
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MOQ 20 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

MMBT5551LT1G specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown160 V
Current - collector (Ic)600 mA
Current - collector cutoff100nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max225 mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic200mV @ 5mA, 50mA
MMBT5551LT1G
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