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onsemi MMBT5551LT1G — Discrete Semiconductors

MMBT5551LT1G 160V 600mA NPN BJT SOT-23 — onsemi | ICBOMS

MPNMMBT5551LT1G
Active

TRANS NPN 160V 0.6A SOT23-3

$0.1700Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MMBT5551LT1G specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown160 V
Current - collector (Ic)600 mA
Current - collector cutoff100nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max225 mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic200mV @ 5mA, 50mA