Skip to main content
onsemi MMBT2222LT1G — Discrete Semiconductors

MMBT2222LT1G – NPN BJT 30V 600mA SOT-23-3

MPNMMBT2222LT1G
Active

TRANS NPN 30V 0.6A SOT23-3

$0.1500Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MMBT2222LT1G specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown30 V
Current - collector (Ic)600 mA
Current - collector cutoff10nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 150mA, 10V
Power - max300 mW
Frequency - transition250MHz
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic1.6V @ 50mA, 500mA