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onsemi FDMS86252L — Discrete Semiconductors

onsemi FDMS86252L

MPNFDMS86252L
Obsolete
$2.2100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS86252L specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4.4A (Ta)
Power dissipation2.5W (Ta), 50W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs56mOhm @ 4.4A, 10V
Gate charge (Qg) (Max) @ vgs21 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1335 pF @ 75 V