onsemi FDMS86163P
MPNFDMS86163P
Active
MOSFET P-CH 100V 7.9A/50A 8PQFN
$2.9300Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | PowerTrench® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 7.9A (Ta), 50A (Tc) |
| Power dissipation | 2.5W (Ta), 104W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 22mOhm @ 7.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 59 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4085 pF @ 50 V |