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onsemi FDMS6681Z — Discrete Semiconductors

onsemi FDMS6681Z

MPNFDMS6681Z
Obsolete
$2.2300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS6681Z specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C21.1A (Ta), 49A (Tc)
Power dissipation2.5W (Ta), 73W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs3.2mOhm @ 22.1A, 10V
Gate charge (Qg) (Max) @ vgs241 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10380 pF @ 15 V