Skip to main content
onsemi FDMS6673BZ — Discrete Semiconductors

onsemi FDMS6673BZ

MPNFDMS6673BZ
Active

MOSFET P-CH 30V 15.2A/28A 8PQFN

$0.3800Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS6673BZ specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C15.2A (Ta), 28A (Tc)
Power dissipation2.5W (Ta), 73W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs6.8mOhm @ 15.2A, 10V
Gate charge (Qg) (Max) @ vgs130 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5915 pF @ 15 V