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onsemi FDMS4435BZ — Discrete Semiconductors

onsemi FDMS4435BZ

MPNFDMS4435BZ
Active

MOSFET P-CH 30V 9A/18A 8PQFN

$1.4200Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS4435BZ specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9A (Ta), 18A (Tc)
Power dissipation2.5W (Ta), 39W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs47 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2050 pF @ 15 V