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onsemi FDMS3662 — Discrete Semiconductors

onsemi FDMS3662

MPNFDMS3662
Active

MOSFET N-CH 100V 8.9A/49A 8PQFN

$2.7700Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS3662 specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.9A (Ta), 49A (Tc)
Power dissipation2.5W (Ta), 104W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs14.8mOhm @ 8.9A, 10V
Gate charge (Qg) (Max) @ vgs75 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4620 pF @ 50 V