Skip to main content
onsemi FDMS3660S-F121 — Discrete Semiconductors

onsemi FDMS3660S-F121

MPNFDMS3660S-F121
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS3660S-F121 specifications
ParameterValue
SeriesPowerTrench®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C13A, 30A
Power - max1W
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Asymmetrical
Case8-PowerTDFN
Vgs(th) (Max) @ id2.7V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs29nC @ 10V
Input capacitance (Ciss) (Max) @ vds1765pF @ 15V