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onsemi FDMS3660AS — Discrete Semiconductors

onsemi FDMS3660AS

MPNFDMS3660AS
Obsolete
$0.6700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS3660AS specifications
ParameterValue
SeriesPowerTrench®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C13A, 30A
Power - max1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.7V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs30nC @ 10V
Input capacitance (Ciss) (Max) @ vds2230pF @ 15V