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onsemi FDMS3626S — Discrete Semiconductors

onsemi FDMS3626S

MPNFDMS3626S
Obsolete
$1.6200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS3626S specifications
ParameterValue
SeriesPowerTrench®
MountingSurface Mount
Drain to source voltage25V
Current - continuous drain (Id) @ 25°C17.5A, 25A
Power - max1W
Operating temperature-55°C ~ 150°C (TJ)
PackageCut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Asymmetrical
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs5mOhm @ 17.5A, 10V
Gate charge (Qg) (Max) @ vgs26nC @ 10V
Input capacitance (Ciss) (Max) @ vds1570pF @ 13V