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onsemi FDMS3606AS — Discrete Semiconductors

onsemi FDMS3606AS

MPNFDMS3606AS
Active

SMALL SIGNAL FIELD-EFFECT TRANSI

$0.9478Ref. price · indicative, final on quote
Packaging8-PowerTDFN
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS3606AS specifications
ParameterValue
SeriesPowerTrench®
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C13A, 27A
Power - max1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual) Asymmetrical
Case8-PowerTDFN
Vgs(th) (Max) @ id2.7V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs29nC @ 10V
Input capacitance (Ciss) (Max) @ vds1695pF @ 15V