Skip to main content
onsemi FDMS1D4N03S — Discrete Semiconductors

onsemi FDMS1D4N03S

MPNFDMS1D4N03S
Obsolete
$2.0000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS1D4N03S specifications
ParameterValue
SeriesPowerTrench®, SyncFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C211A (Tc)
Power dissipation74W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Body)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs1.09mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds10250 pF @ 15 V