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onsemi FDMS1D2N03DSD — Discrete Semiconductors

onsemi FDMS1D2N03DSD

MPNFDMS1D2N03DSD
Last Buy
$1.2900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDMS1D2N03DSD specifications
ParameterValue
SeriesPowerTrench®
FET type2 N-Channel (Dual) Asymmetrical
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Power - max2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerWDFN
Vgs(th) (Max) @ id2.5V @ 320µA, 3V @ 1mA
Rds on (Max) @ id, vgs3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
Gate charge (Qg) (Max) @ vgs33nC @ 10V, 117nC @ 10V
Input capacitance (Ciss) (Max) @ vds1410pF @ 15V, 4860pF @ 15V