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PSMN050-80BS~6118

PSMN050-80BS,118 N-Channel MOSFET, 80 V, 22 A, D2PAK

MPNPSMN050-80BS,118
End of Life

NXP PSMN050-80BS,118 N-Channel MOSFET, 80 V Vdss, 22 A continuous drain, 46 mOhm Rds(on) at 10 V, 11 nC gate charge, D2PAK (TO-263) surface mount, -55 to 175 °C.

$0.28Ref. price · indicative, final on quote
NXP Semiconductors PSMN050-80BS,118 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PSMN050-80BS,118 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C22A (Tc)
Power dissipation56W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs46mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds633 pF @ 12 V

Product details

Gate charge is 11 nC at 10 V, and the input capacitance measures 633 pF at 12 V drain-source. These numbers keep the switching transition losses moderate for a device of this current class — a standard 1 A gate driver can turn it on in tens of nanoseconds. The 10 V drive voltage for the rated Rds(on) means you need a gate supply above the logic level; a 12 V rail or a bootstrap circuit from the switching node handles it cleanly.

The part is ROHS3 compliant, per the current status.

Active product status with no last-time-buy notice.

Frequently asked questions

Is PSMN050-80BS,118 RoHS compliant?

Yes, it is ROHS3 compliant.