Nexperia TrenchMOS P-Channel MOSFET, PMK50XP,518, 20V Vds, 7.9A Id, 50mOhm Rds(on) at 4.5V, ±12V Vgs, 10nC Qg, -55°C to 150°C Tj, Surface Mount.
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Operating temperature high | -55°C to 150°C(TJ) |
| Vgs | ±12 V |
| Power | 5.0 |
| Package_type | Bulk |
| Capacitance_uf | 0.001 |
| Status | Active |
| Supply voltage | 20.0 |
| Vgs(Th) (Max) @ id | 950mV @ 250µA |
| Switching current | 7.9 |
| Rds on (Max) @ id, vgs | 50mOhm @ 2.8 A, 4.5 V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 4.5 V |
The Nexperia PMK50XP,518 is a P-Channel TrenchMOS MOSFET rated for a maximum drain current of 7.9 A at a drain-source voltage of 20 V.
Gate threshold voltage is 950 mV max at 250 µA drain current. Total gate charge at 4.5 V is 10 nC.
The surface-mount package (Bulk delivery) requires a standard reflow profile; the thermal pad area on the PCB sets the effective RthJA.
The on-resistance is 50 mOhm maximum at 2.8 A drain current with a 4.5 V gate drive.
Total gate charge is 10 nC maximum at 4.5 V gate-source voltage.