Switching speed and reverse leakage
The NXPS20H100C,127: Classified as Fast Recovery (trr ≤ 500 ns, Io > 200 mA), the diode handles the reverse-recovery charge of a 100 kHz boost or flyback stage without excessive ringing — the Schottky barrier itself has negligible stored charge, so the speed rating is conservative for most SMPS designs. Reverse leakage is 4.5 µA at 100 V, 25°C; at 125°C junction the leakage rises exponentially and can dominate the off-state loss in a high-temperature PFC stage.
