10W LDMOS at 960 MHz — the gain and power story
The MMRF1015NR1 is an NXP LDMOS RF power transistor delivering 10W output at 960 MHz with 18 dB gain, tested at 28 V and 125 mA bias. That 18 dB gain means a 100 mW drive signal produces the full 10 W output — useful for base station driver stages or industrial RF generators where you want to keep the preamp chain simple.
Package and mounting — TO-270-2 surface mount
Housed in the TO-270-2 package, a surface-mount flange package designed for RF power. The large exposed backside contact provides both electrical ground and the primary thermal path — the PCB land pattern must match the flange footprint for proper heat sinking into the board's copper planes. Rated for 68 V drain-source breakdown, so the 28 V test condition leaves healthy margin.