NXP Semiconductors BUK7E5R2-100E,127 — Discrete Semiconductors
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Nexperia BUK7E5R2-100E,127 N-Channel MOSFET, 100 V, 120 A

MPN BUK7E5R2-100E,127
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Nexperia TrenchMOS BUK7E5R2-100E,127, N-Channel MOSFET, 100 V Vdss, 120 A Id, 5.2 mOhm Rds(on) at 10 V, ±20 V Vgs, 180 nC Qg, I2PAK through-hole, AEC-Q101 automotive grade.

In Stock: 473 pcs
MOQ: 1 pcs
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$1.11 / pc
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[SPEC] Essential Parameters Snapshot Full Specifications (17)
Package / Case I2PAK
Output / Current 100 V

Full Technical Specifications

17 Parameters
BUK7E5R2-100E,127 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation349W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs5.2mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs180 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11810 pF @ 25 V
Series Sibling Variants

NXP Semiconductors TrenchMOS™ Series Models

Sibling variants, package options, and speed/density grades in this NXP Semiconductors semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

It comes in a through-hole I2PAK package and is qualified to AEC-Q101, making it suited for automotive power-train, motor-drive, and high-current switching applications where the junction temperature can reach 175°C.

5.2 mOhm on-resistance — conduction loss in high-current paths

At 120 A the I²R loss is about 75 W — the 349 W power-dissipation rating at case temperature gives enough thermal headroom when the part is properly heatsunk.

Gate charge and input capacitance — drive requirements

These numbers set the gate-driver current needed for a given switching frequency. A 10 A gate driver, for example, can charge the gate in about 18 ns — fast enough for hard-switching converters in the 50–100 kHz range. Slower gate drive reduces EMI but increases switching loss; the 180 nC figure lets you calculate the trade-off for your switching speed.

Frequently asked questions

Is BUK7E5R2-100E,127 automotive qualified?

Yes, the BUK7E5R2-100E,127 carries AEC-Q101 qualification, which is the automotive stress-test standard for discrete semiconductors.

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