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NXP Semiconductors BUK7908-40AIE127

BUK7908-40AIE127 - NXP Semiconductors

MPNBUK7908-40AIE127
End of Life

N-CHANNEL POWER MOSFET

$0.9Ref. price · indicative, final on quote
PackagingTO-220-5
RoHSNot applicable
SeriesAutomotive, AEC-Q101, TrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BUK7908-40AIE127 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation221W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureCurrent Sensing
CaseTO-220-5
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs8mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs84 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3140 pF @ 25 V