NXP BUK764R2-80E,118 Automotive TrenchMOS N-Channel MOSFET, 80V Vdss, 120A Id, 4.2mOhm Rds(on) at 10V, 136nC Qg, TO-263-3 D2PAK, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 324W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 4.2mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 136 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 10426 pF @ 25 V |
The BUK764R2-80E,118: AEC-Q101 qualified for automotive power-switching applications.
Supplied in the TO-263-3 (D2PAK) surface-mount package with a large exposed drain tab.
No official pin-compatible second source or direct replacement is carried in the ledger.
This is the max at 25°C junction; expect about 8 mOhm at 175°C junction.