The specified gate threshold voltage (Vgs(th)) is 4 V maximum at 1 mA drain current, and the recommended drive voltage for minimum on-resistance is 10 V. Total gate charge (Qg) is 29.4 nC at 10 V, which gives a reasonable switching speed for a 34 A device — expect moderate gate-drive power in PWM applications. Input capacitance (Ciss) is 1738 pF at 25 V drain-source, a figure to consider when sizing the gate-drive source impedance for rise/fall time targets.
Thermal and environmental range
Maximum power dissipation is 96 W at case temperature. The maximum gate-source voltage is ±20 V.