Nexperia BUK7575-55A,127 N-channel TrenchMOS MOSFET, 55 V drain-source, 20.3 A continuous drain, 75 mOhm Rds(on) at 10 V, TO-220AB through-hole package, -55°C to 175°C junction temperature.
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20.3A (Tc) |
| Power dissipation | 62W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 75mOhm @ 10A, 10V |
| Input capacitance (Ciss) (Max) @ vds | 483 pF @ 25 V |
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The TO-220AB package (three leads, metal tab) is a through-hole form factor that solders into a board with a single hole pattern. For a rework tech, that means no hot-air profile, no BGA reball — just a soldering iron and a desoldering pump. The metal tab carries the drain potential, so the heatsink interface needs an insulating pad or the chassis must float.
The maximum on-resistance is 75 mOhm at a gate drive of 10 V and a drain current of 10 A. That is the number to use for conduction loss calculations in switching applications.