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NXP Semiconductors BUK754R0-40C,127

BUK754R0-40C,127 N-Channel MOSFET, 40V 100A TO-220AB

MPNBUK754R0-40C,127
End of Life

NXP BUK754R0-40C,127, Automotive AEC-Q101 TrenchMOS™, N-Channel MOSFET, 40V Vdss, 100A Id, 4mOhm Rds(on) @ 10V, TO-220AB, -55°C to 175°C.

$0.49Ref. price · indicative, final on quote
NXP Semiconductors BUK754R0-40C,127 datasheet (PDF)
PackagingTO-220-3
RoHSNot applicable
SeriesAutomotive, AEC-Q101, TrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BUK754R0-40C,127 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation203W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs4mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs97 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5708 pF @ 25 V

Product details

The 4 mOhm maximum on-resistance at Vgs = 10 V and Id = 25 A is the headline figure for conduction loss. The 203 W power dissipation rating (at Ta) and the TO-220AB package with a proper heatsink give headroom for pulsed or moderately continuous high-current operation.

Gate drive and switching considerations

Automotive-grade reliability

The 175 °C maximum junction temperature allows operation in engine-bay ambient temperatures that would derate a commercial-grade MOSFET. For designs targeting under-hood or chassis-domain applications, this qualification is a prerequisite.

The part is listed as Active in the product lifecycle.

Frequently asked questions

Is BUK754R0-40C a logic level gate drive MOSFET?

No. The maximum gate threshold voltage is 4 V at 1 mA, and the on-resistance is specified at Vgs = 10 V. A 5 V gate signal will not fully enhance the channel; a 10 V gate drive is required to achieve the rated Rds(on).