NXP BUK753R8-80E,127, N-channel TrenchMOS MOSFET, 80V Vdss, 120A Id, 4mOhm Rds(on) max @ 25A/10V, AEC-Q101 qualified, TO-220AB through-hole, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 349W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 4mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 169 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 12030 pF @ 25 V |
The NXP BUK753R8-80E,127 is an N-channel TrenchMOS MOSFET rated for 80 V drain-source voltage and 120 A continuous drain current at 25 °C case temperature. The AEC-Q101 qualification and 175 °C junction temperature rating make it a natural fit for under-hood and other under-bonnet environments where ambient heat and vibration are the norm.
The AEC-Q101 qualification is in place.
The maximum on-resistance is 4 mOhm at 25 A drain current with 10 V gate-to-source drive.
The part is listed with a Tube package and no RoHS exemption flag; it is assumed RoHS compliant unless a specific exemption is noted in the datasheet.
The BUK753R8-80E carries a 4 mOhm Rds(on) rating, while the BUK7508-80E is a different variant in the same TrenchMOS family with a different on-resistance and current rating — the exact figures should be compared from their respective datasheets to confirm BOM fit.