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NXP Semiconductors BUK7535-55A,127 — Discrete Semiconductors

BUK7535-55A,127 N-Channel TrenchMOS MOSFET, 55V 35A TO-220

MPNBUK7535-55A,127
End of Life

NXP TrenchMOS™ N-Channel MOSFET, BUK7535-55A,127, 55V Vdss, 35A Id, 35mOhm Rds(on) @ 20A 10V, TO-220-3 through-hole, -55°C to 175°C.

$0.26Ref. price · indicative, final on quote
NXP Semiconductors BUK7535-55A,127 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesTrenchMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BUK7535-55A,127 specifications
ParameterValue
SeriesTrenchMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs35mOhm @ 20A, 10V
Input capacitance (Ciss) (Max) @ vds872 pF @ 25 V

Product details

55 V, 35 A N-channel TrenchMOS — the TO-220 workhorse

The NXP BUK7535-55A,127 is a 55 V, 35 A N-channel TrenchMOS MOSFET in a through-hole TO-220-3 package. It is part of the TrenchMOS series, designed for switching applications where low on-resistance and ruggedness matter.

35 mOhm at 10 V — the number that decides the thermal budget

The 35 mOhm Rds(on) is specified at 20 A and 10 V Vgs, which is the drive voltage for achieving the minimum on-resistance.

Active status, no LTB risk

It is ROHS3 compliant.

Frequently asked questions

What is the typical Rds(on) of BUK7535-55A,127 at 10V Vgs?

The maximum Rds(on) is 35 mOhm at 20 A drain current with 10 V gate drive. This is the on-resistance figure used for conduction loss calculations in a switching application.