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NXP Semiconductors BUK751R8-40E127

BUK751R8-40E127 N-Channel MOSFET, 1.8 mOhm, 40 V, TO-220

MPNBUK751R8-40E127
End of Life

NXP BUK751R8-40E127, Automotive AEC-Q101 TrenchMOS N-channel MOSFET, 40 V Vdss, 1.8 mOhm Rds(on) at 10 V, 120 A Id, TO-220AB through-hole package.

$0.88Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSNot applicable
SeriesAutomotive, AEC-Q101, TrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BUK751R8-40E127 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation349W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs1.8mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs145 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11340 pF @ 25 V

Product details

Why the 1.8 mOhm Rds(on) matters for your power stage

The NXP BUK751R8-40E127 is an automotive-grade N-channel TrenchMOS MOSFET in a TO-220AB through-hole package.

At 100 kHz, the average gate-drive current is 14.5 mA — well within a standard driver's capability — but the peak current needed to charge the 11340 pF input capacitance in a few tens of nanoseconds calls for a driver with at least 2 A peak output. The ±20 V Vgs max gives headroom for a 12 V or 15 V gate drive rail without clamping.

Temperature grade and what it buys you

For industrial designs that see high ambient or frequent thermal cycling, that qualification is a reliability shortcut.

Frequently asked questions

Is the BUK751R8-40E127 RoHS compliant?

The part is listed with a Bulk package and is from NXP's TrenchMOS automotive series, which is typically RoHS-compliant. Confirm the specific date-code compliance against your local RoHS exemption list at order time.