Skip to main content
Log in
NXP Semiconductors BUK7219-55A,118 — Discrete Semiconductors

BUK7219-55A,118 N-Channel MOSFET, 55V 55A 19mOhm DPAK

MPNBUK7219-55A,118
End of Life

Nexperia BUK7219-55A,118 Automotive AEC-Q101 TrenchMOS N-Channel MOSFET, 55V Vds, 55A Id, 19mOhm Rds(on) at 10V Vgs, DPAK surface-mount package.

$0.53Ref. price · indicative, final on quote
NXP Semiconductors BUK7219-55A,118 datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesAutomotive, AEC-Q101, TrenchMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BUK7219-55A,118 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C55A (Tc)
Power dissipation114W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs19mOhm @ 25A, 10V
Input capacitance (Ciss) (Max) @ vds2108 pF @ 25 V

Product details

The BUK7219-55A,118: The 19 mOhm maximum on-resistance at 25 A gate drive of 10 V keeps conduction losses low in high-current switching circuits — think motor drives, solenoid actuators, and DC-DC converters in automotive body and chassis domains. The DPAK (TO-252) surface-mount package fits standard reflow assembly lines and dissipates up to 114 W through the tab.

AEC-Q101 and the TrenchMOS process

The TrenchMOS technology delivers low gate charge and fast switching, which translates to cleaner waveforms and lower switching losses in hard-switched topologies.

Frequently asked questions

Is BUK7219-55A,118 automotive qualified?

Yes, it is AEC-Q101 qualified and part of Nexperia's Automotive series, making it suitable for automotive applications.