BUK6228-55C~6118
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NXP Semiconductors / Discrete Semiconductors

BUK6228-55C,118 N-Channel MOSFET, 55V 31A DPAK

MPN BUK6228-55C,118
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

NXP Automotive AEC-Q101 TrenchMOS N-Channel MOSFET, BUK6228-55C,118, 55V Vdss, 31A Id, 29mOhm Rds(on) at 10V, DPAK surface-mount package.

In Stock: 2,867 pcs
MOQ: 1 pcs
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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Output / Current 55 V

Full Technical Specifications

16 Parameters
BUK6228-55C,118 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C31A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.8V @ 1mA
Rds on (Max) @ id, vgs29mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs20.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1340 pF @ 25 V
Series Sibling Variants

NXP Semiconductors Automotive, AEC-Q101, TrenchMOS™ Series Models

Sibling variants, package options, and speed/density grades in this NXP Semiconductors semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

On-resistance and gate drive — what sets the conduction and switching budget

At 31 A continuous drain current, the I²R loss at full rated current reaches about 28 W, which must be managed against the 60 W package thermal limit. The gate charge of 20.2 nC at 10 V means a standard gate driver with 1 A peak source/sink capability can switch this FET in the tens-of-nanoseconds range; for higher-frequency designs above 100 kHz, the gate-drive power dissipation becomes a design consideration.

AEC-Q101 and the 175°C junction — qualified for the harsh environment

The -55°C to 175°C operating junction range exceeds the typical automotive under-hood requirement of 150°C, providing margin in high-ambient applications like engine control units or transmission modules. The maximum gate-source voltage of ±16 V accommodates standard 12 V automotive gate drives with headroom for transient overvoltage.

DPAK footprint and thermal management

The exposed metal tab is the drain terminal and provides the primary thermal path. For 60 W maximum dissipation at case temperature, adequate PCB copper area on the drain pad — typically 1 to 2 square inches per layer — is needed to keep junction temperature within limits under full load. The tab is electrically live at drain potential, so the PCB layout must account for isolation spacing.

Frequently asked questions

What is the closest pin-compatible alternative to BUK6228-55C,118?

The evidence does not list a specific pin-compatible second-source part. Within the same NXP TrenchMOS family, other 55 V DPAK N-channel devices with similar Rds(on) and current ratings may be footprint-compatible, but their gate charge and threshold voltage characteristics should be verified against the application requirements.

BUK6228-55C,118
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