NXP AFT05MS031NR1 RF MOSFET LDMOS transistor, 13.6V test voltage, 31W output power, 520MHz frequency, 17.7dB gain, TO-270AA surface-mount package.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - test | 13.6 V |
| Voltage - rated | 40 V |
| Current - test | 10 mA |
| Power - output | 31W |
| Frequency | 520MHz |
| Gain | 17.7dB |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | LDMOS |
| Case | TO-270AA |
The NXP AFT05MS031NR1 is an RF power LDMOS transistor. It delivers 31 W output power at 520 MHz with 17.7 dB gain when biased at 13.6 V and 10 mA quiescent current.
The 31 W output power at 520 MHz and 17.7 dB gain at the test condition are the key specs. Rated drain voltage is 40 V, so the 13.6 V test condition leaves headroom.
It is ROHS3 compliant.
The AFT05MS031NR1 provides 17.7 dB gain at 520 MHz when tested at 13.6 V and 10 mA bias current. That gain figure is for the class-AB bias point shown in the datasheet.
The AFT05MS031NR1 is rated for 31 W output power at 520 MHz. This is the continuous-wave (CW) power capability under the specified test conditions.
Stock levels change daily. The AFT05MS031NR1 is an active NXP part with regular production, so it is generally available through distribution. Submit an RFQ for current stock position and lead time.