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NXP USA Inc. BC550C,112 — Discrete Semiconductors

NXP USA Inc. BC550C,112

MPNBC550C,112
Obsolete
$0.3400Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC550C,112 specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown45 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce420 @ 2mA, 5V
Power - max500 mW
Frequency100MHz
Operating temperature150°C (TJ)
PackageBulk
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic600mV @ 5mA, 100mA