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NXP USA Inc. BC327-40,112 — Discrete Semiconductors

NXP USA Inc. BC327-40,112

MPNBC327-40,112
Obsolete
$0.3500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC327-40,112 specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown45 V
Current - collector (Ic)500 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce250 @ 100mA, 1V
Power - max625 mW
Frequency80MHz
Operating temperature150°C (TJ)
PackageBulk
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vce saturation (Max) @ ib, ic700mV @ 50mA, 500mA