NXP USA Inc. 2N7000,126
MPN2N7000,126
Obsolete
$0.4900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 300mA (Tc) |
| Power dissipation | 830mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Box (TB) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Vgs(th) (Max) @ id | 2V @ 1mA |
| Rds on (Max) @ id, vgs | 5Ohm @ 500mA, 10V |
| Input capacitance (Ciss) (Max) @ vds | 40 pF @ 10 V |