NXP USA Inc. 2N3906,116
MPN2N3906,116
Obsolete
$0.4100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | PNP |
| Voltage - collector emitter breakdown | 40 V |
| Current - collector (Ic) | 200 mA |
| Current - collector cutoff | 50nA (ICBO) |
| DC current gain (hFE) (Min) @ ic, vce | 100 @ 10mA, 1V |
| Power - max | 500 mW |
| Frequency | 250MHz |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Vce saturation (Max) @ ib, ic | 200mV @ 5mA, 50mA |