Micron SYNCBURST™ MT58L32L32DT-10, 1Mbit synchronous SRAM, 32K x 32 organization, 5 ns access time, 100 MHz clock, 3.135V–3.6V supply, 100-TQFP, 0°C to 70°C.
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SYNCBURST™ |
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3.135V ~ 3.6V |
| Clock frequency | 100 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Bulk |
| Technology | SRAM - Synchronous |
| Access time | 5 ns |
| Memory size | 1Mbit |
| Memory format | SRAM |
| Case | 100-LQFP |
| Memory organization | 32K x 32 |
Sibling variants, package options, and speed/density grades in this Micron Technology semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
A 5 ns access time at 100 MHz clock means the SRAM can present data within one clock cycle after the address is latched.
Rated for 0°C to 70°C ambient, this is a commercial-temperature part.
The MT58L32L32DT-10 has a 5 ns access time, paired with a 100 MHz maximum clock frequency.
The supply voltage range is 3.135V to 3.6V.
Yes, the MT58L32L32DT-10 is supplied in a 100-TQFP (14x20.1 mm) package.