Micron SYNCBURST™ MT58L128L36P1T-10, 4Mbit synchronous SRAM, 128K x 36 organization, 5 ns access time, 100 MHz clock frequency, parallel interface, 3.135V–3.6V supply, 0°C to 70°C, 100-TQFP (14x20.1 mm).
| Parameter | Value |
|---|---|
| Series | SYNCBURST™ |
| Memory type | Volatile |
| Mounting | Surface Mount |
| Voltage | 3.135V ~ 3.6V |
| Frequency | 100 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Bulk |
| Technology | SRAM |
| Access time | 5 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 100-LQFP |
| Memory organization | 128K x 36 |
This means the part remains in Micron's standard production portfolio, and normal replenishment cycles apply. For BOM planning, there is no urgency to stockpile or qualify a substitute.
Three Micron NAND Flash and NOR Flash parts (MT29F4G08, MT29F1G08, MT25QU256) are listed as peers. These are non-volatile memories with different interfaces and supply voltages. None is a functional replacement for a synchronous SRAM.
It is Active. No end-of-life notice or last-time-buy schedule has been issued. The part remains in Micron's current production portfolio.
The access time is 5 ns, with a 100 MHz clock frequency. This gives a 5 ns data-valid window after the clock edge.
No pin-compatible replacement is listed in the official record. The part is Active, so no successor has been designated. For a second-source, you would need to evaluate other synchronous SRAMs with the same 100-TQFP footprint and 128K x 36 organization from vendors like Cypress/Infineon or GSI Technology, but no cross-reference is provided here.
The suffix indicates the speed grade: the -10 is rated for 100 MHz (10 ns cycle), while a -7.5 would be rated for 133 MHz (7.5 ns cycle). The -10 is the standard speed bin; the -7.5 is a faster, often more expensive variant. Both share the same pinout and organization.