Micron Technology MT55L256L18F1T-12TR — Memory (DRAM / SRAM / Flash / EEPROM)
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Micron Technology / Memory (DRAM / SRAM / Flash / EEPROM)

Micron MT55L256L18F1T-12TR 4Mbit ZBT SRAM, 9 ns Access Time

MPN MT55L256L18F1T-12TR
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Micron ZBT® series, 4Mbit SRAM, 256K x 18 organization, 9 ns access time, 83 MHz, parallel interface, 3.135 V supply, 100 TQFP, 0°C to 70°C.

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MOQ: 1 pcs
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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Supply Voltage 3.135

Full Technical Specifications

13 Parameters
MT55L256L18F1T-12TR specifications
Parameter / AttributeSpecification / Value
SeriesZBT®
InterfaceParallel
MountingSurface Mount
Operating temperature high0°C to 70°C (TA)
Frame_size4Mbit
Access time9 ns
Memory typeVolatile
Frequency83000000.0
Package_typeBulk
Memory formatSRAM
StatusActive
Supply voltage3.135
Memory organization256K x 18
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Technical Details & Description

The Micron MT55L256L18F1T-12TR is a 4Mbit ZBT synchronous SRAM organized as 256K x 18 bits. ZBT architecture eliminates the dead bus cycle between read and write transitions.

It is not rated for industrial enclosures or outdoor cabinets.

Frequently asked questions

What is the access time of MT55L256L18F1T-12TR?

The access time is 9 ns, measured from the clock edge to data valid. This is the key timing parameter for bus margin analysis at the 83 MHz operating frequency.

What is a direct replacement for MT55L256L18F1T-12TR?

There is no official direct replacement from Micron because the part is still active. The peer parts listed (MT29F4G08, MT29F1G08, MT25QU256) are Flash memories, not functional equivalents to this ZBT SRAM.

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