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IXYS IXTF02N450

IXYS IXTF02N450

MPNIXTF02N450
Active

MOSFET N-CH 4500V 200MA I4PAC

$45.33Ref. price · indicative, final on quote
Packagingi4-Pac™-5 (3 Leads)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTF02N450 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage4500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C200mA (Tc)
Power dissipation78W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Casei4-Pac™-5 (3 Leads)
Vgs(th) (Max) @ id6.5V @ 250µA
Rds on (Max) @ id, vgs750Ohm @ 10mA, 10V
Gate charge (Qg) (Max) @ vgs10.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds256 pF @ 25 V